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PTF210451
LDMOS RF Power Field Effect Transistor 45 W, 2110-2170 MHz
Description
The PTF210451 is a 45 W internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.
Features
* * Internal matching for wideband performance Typical two-carrier WCDMA performance - Average output power = 11.5 W - Gain = 14 dB - Efficiency = 27% - IM3 = -37 dBc Typical CW performance - Output power at P-1dB = 50 W - Linear gain = 14 dB - Efficiency = 53% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI Drift Capable of handling 10:1 VSWR @ 28 V, 45 W (CW) output power
Two-Carrier WCDMA Drive-Up
VDD = 28 V, IDQ = 500 mA, f = 2140 MHz, 3GPP WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing
-30 Efficiency 30 25 20 ACPR -45 -50 -55 30 32 34 36 38 40 42 IM3 15 10 5
*
IM3 (dBc), ACPR (dBc)
Drain Efficiency (%)
-35 -40
* * * *
Average Output Power (dBm)
PTF210451E Package 30265
ESD: Electrostatic discharge sensitive device -- observe handling precautions!
RF Performance
at TCASE = 25C unless otherwise indicated
WCDMA Measurements (not subject to production test--verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 500 mA, P OUT = 11.5 W AVG
f1 = 2140 MHz, f2 = 2150 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF
Characteristic
Intermodulation Distortion Gain Drain Efficiency
Symbol
IMD Gps D
Min
-- -- --
Typ
-37 14 27
Max
-- -- --
Units
dBc dB %
Two-Tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 500 mA, POUT = 45 W PEP, f = 2170 MHz, Tone Spacing = 1 MHz
Characteristic
Gain Drain Efficiency Intermodulation Distortion Data Sheet 1
Symbol
Gps D IMD
Min
13 35 --
Typ
14 38 -32
Max
-- -- -30
Units
dB % dBc 2003-12-22
PTF210451
DC Characteristics at TCASE = 25C unless otherwise indicated
Characteristic
Drain-Source Breakdown Voltage Drain Leakage Current On-State Resistance Operating Gate Voltage Gate Leakage Current
Conditions
VGS = 0 V, ID = 10 A VDS = 28 V, V GS = 0 V VGS = 10 V, V DS = 0.1 V VDS = 28 V, IDQ = 500 mA VGS = 10 V, V DS = 0 V
Symbol
V(BR)DSS IDSS RDS(on) VGS IGSS
Min
65 -- -- 2.5 --
Typ
-- -- 0.2 3.2 --
Max
-- 1.0 -- 4.0 1.0
Units
V A V A
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Junction Temperature Total Device Dissipation Above 25C derate by Storage Temperature Range Thermal Resistance (TCASE = 70C, 45 W CW) TSTG RJC
Symbol
VDSS VGS TJ PD
Value
65 -0.5 to +12 200 175 1.0 -40 to +150 1.0
Unit
V V C W W/C C C/W
Typical Performance (data taken in production test fixture)
Broadband Performance
VDD = 28 V, IDQ = 500 mA, POUT = 40 dBm
30 0 Efficiency
Power Sweep, CW Conditions
VDD = 28 V, IDQ = 500 mA, f = 2170 MHz
17 Efficiency 16 60 50 40 Gain 14 13 12 34 36 38 40 42 44 46 48 30 20 10
Gain (dB), Efficiency (%)
Input Return Loss (dB)
Gain (dB)
20 15 10 5 0 2070 Gain
-10 -15 -20 -25 -30 2210
15
Input Retrun Loss
2105
2140
2175
Frequency (MHz)
Output Power (dBm)
Data Sheet
2
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Drain Efficiency (%)
25
-5
PTF210451
Typical Performance (cont.)
Intermodulation Distortion vs. Output Power for selected currents
VDD = 28 V, f = 2140 MHz, tone spacing = 1 MHz
-30 -35 0.40 A -40
-25 -30 -35
Intermodulation Distortion Products vs. Tone Spacing
VDD = 28 V, IDQ = 500 mA, f = 2140 MHz, POUT = 45 W PEP
3rd Order
IMD (dBc)
IMD (dBc)
0.60 A -45 -50 -55 -60 34 36 38 40 42 44 46 48 0.45 A
-40 -45 -50
5th Order
7th Order
0.50 A
0.55 A
-55 -60 0 10 20 30 40
Output Power, PEP (dBm)
Tone Spacing (MHz)
Two-Tone Drive-Up
VDD = 28 V, IDQ = 500 mA, f = 2140 MHz, tone spacing = 1MHz
-25 -30 -35 Efficiency 45 40
Single-Carrier WCDMA Drive-Up
VDD = 28 V, IDQ = 500 mA, f = 2140 MHz, 3GPP WCDMA signal, Test Model 1 w/16 DPCH, 67% clipping, P/A R = 8.7 dB, 3.84 MHz BW
-35 Efficiency 30 25 20 15 ACPR Up ACPR Low -60 30 32 34 36 38 40 42 5 10
Drain Efficiency (%)
IMD (dBc)
ACPR (dB)
-40 -45 -50 -55 -60 -65 34 36 38 40 42 44 46 48 IM5 IM7 IM3
30 25 20 15 10 5
-45 -50 -55
Peak Output Power (dBm)
Avgerage Output Power (dBm)
Data Sheet
3
2003-12-22
Drain Efficiency (%)
35
-40
PTF210451
Typical Performance (cont.)
IM3, Gain & Drain Efficiency vs. Supply Voltage
IDQ = 500 mA, f = 2140 MHz, POUT = 44.75 dBm (PEP), Tone Spacing = 1 MHz
0 -5 Efficiency 50 40 35 30 IM3 Up Gain 25 20 15 10 5 0 23 24 25 26 27 28 29 30 31 32 33
1.03
Bias Voltage vs. Case Temperature
Voltage normalized to typical gate voltage.
Series show current.
Gain (dB), Drain Efficiency (%)
4.50 A 3.75 A 1.01 1.00 0.99 0.98 0.97 0.96 -20 3.00 A 2.25 A 1.50 A 0.75 A
-10 -15 -20 -25 -30 -35 -40 -45
Normalized Bias Voltage
45
1.02
3rd Order IMD (dBc)
5
30
55
80
105
Supply Voltage (V)
Case Temperature (C)
Broadband Circuit Impedance Data
R
- WAVEL ENGT HS
Z Source
Z Load
0.0
0.1
0.2
S
Frequency
MHz 2070 2110 2140 2170 2210 R
Z Source
jX -9.36 -8.97 -8.52 -8.16 -7.79 R 4.94 4.90 4.96 4.96 4.88 5.72 5.17 4.88 4.59 4.08
Z Load
jX -0.87 -0.69 -0.60 -0.49 -0.39
LOAD S TOW ARD E NGTH
G
2210 MHz 2070 MHz
0.1
L A VE
Z Source
2210 MHz 2070 MHz
0. 2
W <---
0. 3
Data Sheet
4
2003-12-22
0.3
0 .1
D
TOW A
RD G E NE
Z0 = 50
Z Load
PTF210451
Test Circuit
210451E SCHEMATIC DWG FOR DATA SHEET.dwg
Test Circuit Schematic for 2170 MHz Circuit Assembly Information DUT PTF210451E Circuit Board 0.79 mm. [.031"] thick, r = 4.5 Microstrip l1 l2 l3 l4 l5 l6 l7 l8 l9 l10 l11 l12 Electrical Characteristics at 2170 MHz 0.047 , 45 0.040 , 23 0.132 , 66 0.028 , 45 0.018 , 12 0.074 , 7 0.152 , 9 0.257 , 68 0.027 , 44 0.056 , 56 0.036 , 19 0.076 , 44
LDMOS Transistor Rogers TMM4, 2 oz. copper Dimensions: L x W (mm.) 3.48 x 1.78 2.87 x 4.57 10.08 x 0.89 2.08 x 1.78 26.67 x 10.06 4.98 x 17.68 10.34 x 13.56 19.76 x 0.84 1.98 x 1.83 4.22 x 1.22 2.57 x 5.74 5.64 x 1.80 Dimensions: L x W (in.) 0.137 x 0.070 0.113 x 0.180 0.397 x 0.035 0.082 x 0.070 1.050 x 0.396 0.196 x 0.696 0.407 x 0.534 0.778 x 0.033 0.078 x 0.072 0.166 x 0.048 0.101 x 0.226 0.222 x 0.071
Data Sheet
5
2003-12-22
PTF210451
Test Circuit (cont.)
210451E ASSEMBLY DWG FOR DATA SHEET.dwg
Reference Circuit1 (not to scale) Component C1 C2, C8 C3, C7 C4, C6 C5, C9 L1 R1, R2 R3 Description Capacitor, 10 F, 35 V, Tantalum TE, SMD Capacitor, 0.01 F Capacitor, 1 F Capacitor, 7.5 pF Capacitor, 10 pF Ferrite Bead Resistor, 3.3K ohm, 1/4 W Resistor, 10 ohm, 1/4 W Manufacturer Digi-Key ATC ATC ATC ATC Elne Magnetic Digi-Key Digi-Key P/N or Comment PCS6106TR-ND X08J103AFB ATC 200B103MW X24L105BVC 100B 7R5 100A 100 #BDS31314.6-452 P3.3K ECT-ND P10 ECT-ND
1 Gerber files for this circuit available on request
Data Sheet
6
2003-12-22
PTF210451
Ordering Information
Type PTF210451E Package Outline 30265 Package Description Thermally enhanced, flange Marking PTF210451E
Package Outline Specifications Package 30265
(45 X 2.03 [.080]) 7.11 [.280] C L
D
2X 2.590.38 [.107 .015] 15.600.51 [.614.020] FLANGE 9.78 [.385]
S
C L LID 10.160.25 [.400.010]
G
2X R1.60 [.063] 2x 7.11 [.280] 15.23 [.600] 10.160.25 [.400.010] 0.51 [.020] 3.480.38 [.137.015] 0.0381 [.0015] -A20.31 [.800] SPH 1.57 [.062] 4x 1.52 [.060]
1.02 [.040]
30265-2303-mec
Notes: Unless otherwise specified 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. Pins: D = drain, S = source, G = gate. 4. Lead thickness: 0.10 +0.051/-0.025 [.004 +.002/-.001] Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products
Data Sheet
7
2003-12-22
PTF210451 Revision History: Previous Version: Page 2003-12-22 none Data Sheet
Subjects (major changes since last revision)
We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GOLDMOS) USA or +1 408 776 0600 International
Edition 2003-12-22 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 Munchen, Germany (c) Infineon Technologies AG 2003. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 8 2003-12-22

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